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标 题 |
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ABB PCT二极管5STP 04D5200
Phase Control Thyristor5STP 04D5200VDRM = 5200 VIT(A V)M = 420 AIT(RMS) = 650 AITSM = 6.1103 AVT0 = 1.29 VrT = 1.917 m&O
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2024-09-30 |
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ABB PCT二极管5STP 38Q4200
Phase Control Thyristor5STP 38Q4200VDRM=4200 VIT(A V)M=4420 AIT(RMS)=6950 AITSM= 64.5103AVT0=0.973 VrT=0.126 mW
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2024-09-30 |
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ABB PCT二极管5STP 38N4200
Phase Control Thyristor5STP 38N4200VDRM=4200 VIT(A V)M=4090 AIT(RMS)=6420 AITSM= 64.5103AVT0=0.973 VrT=0.126 m
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2024-09-30 |
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ABB PCT二极管5STP 28L4200
Phase Control Thyristor5STP 28L4200VDRM=4200 VIT(A V)M=3290 AIT(RMS)=5160 AITSM= 54.0103AVT0=1.03 VrT=0.138 mW Patented
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2024-09-27 |
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ABB PCT二极管5STP 18H4200
Phase Control Thyristor5STP 18H4200VDRM = 4200 V IT(A V)M = 2170 A IT(RMS) = 3400 A ITSM = 32.0103 A VT0 = 0.982 V rT =
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2024-09-27 |
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ABB PCT二极管5STP 12F4200
Phase Control ThyristorPhase Control Thyristor5STP 12F4200VDRM=4200 VIT(A V)M=1190 AIT(RMS)=1860 AITSM= 17.3103AVT0=1.01
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2024-09-27 |
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ABB PCT二极管5STP 04D4200
Phase Control Thyristor5STP 04D4200VDRM=4200 VIT(A V)M=500 AIT(RMS)=785 AITSM= 7.1103AVT0=1.14 VrT=1.288 mW专利浮动硅技
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2024-09-27 |
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ABB IGBT模块5SNA 1800E330400
ABB IGBT模块5SNA 1800E3304005SNA 1800E330400HiPak IGBT moduleVCE = 3300 VIC = 1800 A超低损耗TSPT+技术具有增加的二极管面
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2024-06-14 |
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