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标 题 |
更新时间 |
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SiC MOS P3M06060BD
SiC MOS P3M06060BDSiC MOS P3M06060BDN-Channel Enhancement ModeFeaturesQualified to AEC-Q101High Blocking Voltage with Lo
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2024-12-09 |
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SiC MOS P3M06040K4
SiC MOS P3M06040K4N-Channel Enhancement ModeFeaturesQualified to AEC-Q101High Blocking Voltage with Low On-ResistanceHig
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2024-12-06 |
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SiC MOS P3M06040BD
SiC MOS P3M06040BDN-Channel Enhancement ModeFeaturesQualified to AEC-Q101High Blocking Voltage with Low On-ResistanceHig
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2024-12-06 |
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SiC MOS P3M06025K4
SiC MOS P3M06025K4N-Channel Enhancement ModeFeaturesQualified to AEC-Q101High Blocking Voltage with Low On-ResistanceHig
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2024-12-06 |
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SiC MOS P3M06025K3
SiC MOS P3M06025K3SiC MOS P3M06025K3N-Channel Enhancement ModeFeaturesQualified to AEC-Q101High Blocking Voltage with Lo
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2024-12-06 |
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SIC MOS管P3M06025BD
SiC MOS P3M06025BDN-Channel Enhancement ModeFeaturesHigh Blocking Voltage with Low On-ResistanceHigh-Frequency Operation
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2024-12-06 |
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ABB PCT晶闸管5STP 27N8500
Phase Control Thyristor5STP 27N8500VDRM=8500 VIT(A V)M=2660 AIT(RMS)=4180 AITSM= 64.0103AVT0=1.13 VrT=0.394 mPatented
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2024-10-24 |
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ABB PCT晶闸管5STP 48Y7200
Phase Control Thyristor5STP 48Y7200VDRM = 7200 VIT(A V)M = 5040 AIT(RMS) = 7910 AITSM = 92.0103 AVT0 = 0.983 VrT = 0.128
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2024-10-24 |
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