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ABB IGCT晶闸管5SHY 35L4520
Asymmetric Integrated GateCommutated Thyristor5SHY 35L4520VDRM = 4500 VITGQM = 4000 AITSM = 32103 AV(T0) = 1.4 VrT = 0.3
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2024-12-16 |
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ABB IGCT晶闸管5SHX 36L4521
Reverse Conducting IntegratedGate-Commutated Thyristor5SHX 36L4521PreliminaryVDRM = 4500 VITGQM = 3600 AITSM = 20.0103 A
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2024-12-16 |
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ABB IGCT模块5SHX 26L4520
VDRM = 4500 VReverse Conducting IntegratedGate-Commutated Thyristor5SHX 26L4520ITGQM = 2200 AITSM = 17103 AVT0 = 1.8 VrT
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2024-12-16 |
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ABB IGCT晶闸管5SHX 36L4520
Reverse Conducting IntegratedGate-Commutated Thyristor5SHX 36L4520PreliminaryVDRM = 4500 VITGQM = 3600 AITSM = 15.0103 A
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2024-12-16 |
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SiC MOS P3M06060T3
SiC MOS P3M06060T3N-Channel Enhancement ModeFeaturesQualified to AEC-Q101High Blocking Voltage with Low On-ResistanceHig
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2024-12-09 |
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SiC MOS P3M06060K4
SiC MOS P3M06060K4N-Channel Enhancement ModeFeaturesQualified to AEC-Q101High Blocking Voltage with Low On-ResistanceHig
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2024-12-09 |
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SiC MOS P3M06060K3
SiC MOS P3M06060K3N-Channel Enhancement ModeFeaturesQualified to AEC-Q101High Blocking Voltage with Low On-ResistanceHig
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2024-12-09 |
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SiC MOS P3M06060G7
SiC MOS P3M06060G7N-Channel Enhancement ModeFeaturesQualified to AEC-Q101High Blocking Voltage with Low On-ResistanceHig
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2024-12-09 |
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